computer Arcitecture and organization Mock Exam 6
University of Ilorin
This comprehensive mock exam, "Computer Architecture and Organization Mock Exam 6," is tailored to rigorously assess your understanding of core memory concepts. Spanning nearly seven hours, this theory-based exam delves deep into the intricate workings of memory cells, the distinctions between volatile and non-volatile storage, and the architectural nuances of DRAM and SRAM. You will be challenged to analyze the trade-offs in density, speed, and cost, and to comprehend the operational differences between various ROM technologies like PROM, EPROM, and EEPROM.
About This Exam
This comprehensive mock exam, "Computer Architecture and Organization Mock Exam 6," is tailored to rigorously assess your understanding of core memory concepts. Spanning nearly seven hours, this theory-based exam delves deep into the intricate workings of memory cells, the distinctions between volatile and non-volatile storage, and the architectural nuances of DRAM and SRAM. You will be challenged to analyze the trade-offs in density, speed, and cost, and to comprehend the operational differences between various ROM technologies like PROM, EPROM, and EEPROM.
Topics Covered
Exam Structure
- Question Formattheory
- Total Questions15
- Estimated Duration60 minutes
- Difficulty LevelMedium
Learning Objectives
- •Understand the fundamental properties of memory cells for binary data storage.
Prerequisites
Basic understanding of digital logic, binary representation, and fundamental computer hardware concepts is recommended. Familiarity with basic semiconductor device principles is helpful.
Preview questions coming soon for this exam.
How to Prepare
Key Preparation Tips
- Review fundamental concepts of binary storage and memory cell properties.
Mistakes to Avoid
- •Confusing the operational differences between DRAM and SRAM, especially regarding refresh cycles.
Success Criteria
A strong performance on this mock exam would involve correctly answering the majority of questions, demonstrating a clear understanding of memory cell properties, DRAM/SRAM distinctions, ROM variations, error correction principles, and memory organization logic. Achieving a score of 75% or higher indicates a solid grasp of the material.
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